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PHOTOTRANSISTOR
Industry Standard Single Channel 6 Pin DIP Optocoupler
DEVICE TYPES Part No. CTR % Min. 4N25 20 4N26 20 4N27 10 4N28 10 4N35 100 4N36 100 4N37 100 4N38 10 H11A1 50 H11A2 20 H11A3 20 H11A4 10 H11A5 30
Dimensions in Inches (mm)
Part No. MCT2 MCT2E MCT270 MCT271 MCT272 MCT273 MCT274 MCT275 MCT276 MCT277
CTR % Min. 20 20 50 45-90 75-150 125-250 225-400 70-90 15-60 100
3 .248 (6.30) .256 (6.50) 4
2
1
pin one ID
Anode 1 Cathode 2
5 6
6 Base 5 Collector 4 Emitter
NC 3
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) .300 (7.62) typ.
FEATURES * Interfaces with Common Logic Families * Input-output Coupling Capacitance < 0.5 pF * Industry Standard Dual-in-line 6-pin Package * Field Effect Stable by TRIOS(R) * 5300 VRMS Isolation Test Voltage * Underwriters Laboratory File #E52744 * V VDE #0884 Approval Available with Option 1
DE
DESCRIPTION This data sheet presents five families of Infineon Industry Standard Single Channel Phototransistor Couplers. These families include the 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/ A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/ 277 devices.Each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS Isolation Test Voltage. This isolation performance is accomplished through Infineon double molding isolation manufacturing process. Compliance to VDE 0884 partial discharge isolation specification is available for these families by ordering option 1. Phototransistor gain stability, in the presence of high isolation voltages, is insured by incorporating a TRansparent lOn Shield (TRIOS)(R) on the phototransistor substrate. These isolation processes and the Infineon IS09001 Quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.
APPLICATIONS * AC Mains Detection * Reed Relay Driving * Switch Mode Power Supply Feedback * Telephone Ring Detection * Logic Ground Isolation * Logic Coupling with High Frequency Noise Rejection
Notes: Designing with data sheet is covered in Application Note 45.
2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-53 March 27, 2000-00
Maximum Ratings TA=25C Emitter Reverse Voltage .......................................................................................... 6.0 V Forward Current ........................................................................................ 60 mA Surge Current (t10 s)............................................................................... 2.5 A Power Dissipation................................................................................... 100 mW Detector Collector-Emitter Breakdown Voltage........................................................... 70 V Emitter-Base Breakdown Voltage ................................................................ 7.0 V Collector Current ....................................................................................... 50 mA Collector Current(t <1.0 ms).................................................................... 100 mA Power Dissipation................................................................................... 150 mW Package Isolation Test Voltage.......................................................................... 5300 VRMS Creepage .............................................................................................. 7.0 mm Clearance ............................................................................................. 7.0 mm Isolation Thickness between Emitter and Detector ............................... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175 Isolation Resistance VIO=500 V, TA=25C...............................................................................1012 VIO=500 V, TA=100C............................................................................ 1011 Storage Temperature................................................................ -55C to +150C Operating Temperature ............................................................ -55C to +100C Junction Temperature................................................................................ 100C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm) ...................................................... 260C 4N25/26/27/28--Characteristics TA=25C
Emitter Forward Voltage* Reverse Current* Capacitance Detector Breakdown Voltage* Collector-Emitter Emitter-Collector Collector-Base BVCEO BVECO BVCBO -- -- 30 7.0 70 -- -- -- -- -- -- 5.0 10 2.0 6.0 -- -- -- 50 100 20 -- nA nA pF V Symbol Min. -- -- -- Typ. 1.3 0.1 25 Max. 1.5 100 -- Unit V Condition
VF IR CO
IF=50 mA VR=3.0 V VR=0
A
pF
IC=1.0 mA IE=100 A IC=100 A VCE=10 V, (base open) VCB=10 V, (emitter open) VCE=0
ICEO(dark)*
ICBO(dark)* Capacitance, Collector-Emitter Package DC Current Transfer Ratio*
4N25/26/27 4N28
CCE
4N25/26 4N27/28
CTR
20 10
50 30 -- -- -- -- -- 0.5 2.0
-- -- -- -- -- 0.5 -- -- --
%
VCE=10 V, IF=10 mA
Isolation Voltage*
4N25 4N26/27 4N28
VIO
2500 1500 500
V
Peak, 60 Hz
Saturation Voltage, Collector-Emitter Resistance, Input to Output* Coupling Capacitance Rise and Fall Times
* Indicates JEDEC registered values
VCE(sat) RIO CIO
tr, tf
-- 100 -- --
V G pF
ICE=2.0 mA, IF=50 mA
VIO=500 V
f=1.0 MHz
s
IF=10 mA VCE=10 V, RL=100
Phototransistor, Industry Standard
2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-54
March 27, 2000-00
4N35/36/37/38--Characteristics TA=25C
Emitter Forward Voltage* Reverse Current* Capacitance Detector Breakdown Voltage, Collector-Emitter* 4N35/36/37 4N38 Breakdown Voltage, Emitter-Collector* Breakdown Voltage, Collector-Base* 4N35/36/37 4N38 Leakage Current, Collector-Emitter* 4N35/36/37 4N38 Leakage Current, Collector-Emitter* 4N35/36/37 4N38 Capacitance, Collector-Emitter Package DC Current Transfer Ratio* 4N35/36/37 4N38 DC Current Transfer Ratio* 4N35/36/37 4N38 Resistance, Input to Output* Coupling Capacitance Switching Time*
* Indicates JEDEC registered value
Symbol VF IR CO BVCEO BVECO BVCBO ICEO ICEO CCE CTR
Min. 0.9
Typ. 1.3 0.1 25
Max. 1.5 1.7 10 --
Unit V
Condition IF=10 mA IF=10 mA, TA=-55C VR=6.0 V VR=0, f=1.0 MHz IC=1.0 mA IE=100 A IC=100 A, IB=1.0 A VCE=10 V, IF=0 VCE=60 V, IF=0 VCE=30 V, IF=0, TA=100C VCE=60 V, IF=0, TA=100C VCE=0 VCE=10 V, IF=10 mA, VCE=1.0 V, IF=20 mA VCE=10 V, IF=10 mA, TA=-55 to 100C VIO=500 V f=1.0 MHz IC=2.0 mA, RL=100 , VCC=10 V
A
pF
30 80 7.0 70 80 -- -- -- -- --
-- -- -- -- -- 5.0 -- -- 6.0 6.0
-- -- -- -- -- 50 50 500 -- --
V
V V -- nA
A
pF
100 20
-- -- 50 30
-- -- -- -- -- -- --
%
CTR -- RIO CIO
40 -- 10 -- --
11
% --
-- 0.5 10
pF s
tON, tOFF
H11A1 through H11A5--Characteristics TA=25C
Emitter Forward Voltage H11A1-H11A4 H11A5 Reverse Current Capacitance Detector Breakdown Voltage, Collector-Emitter Breakdown Voltage, Emitter-Collector Breakdown Voltage, Collector-Base Leakage Current, Collector-Emitter Capacitance, Collector-Emitter Package DC Current Transfer Ratio H11A1 H11A2/3 H11A4 H11A5 Saturation Voltage, Collector-Emitter Capacitance, Input to Output Switching Time VCEsat CIO CTR 50 20 10 30 -- -- -- -- -- -- -- -- 0.5 3.0 -- -- -- -- 0.4 -- -- V pF s ICE=0.5 mA, IF=10 mA -- % BVCEO BVECO BVCBO ICEO CCE 30 7.0 70 -- -- -- -- -- 5.0 6.0 -- -- -- 50 -- V V V nA pF IR C0 Symbol VF Min. -- -- -- -- Typ. 1.1 1.1 -- 50 Max. 1.5 1.7 10 -- Unit V Condition
IF=10 mA VR=3.0 V VR=0, f=1.0 MHz IC=1.0 mA, IF=0 mA
IE=100 A, IF=0 mA
A
pF
IC=10 A, IF=0 mA VCE=10 V, IF=0 mA VCE=0 VCE=10 V, IF=10 mA
tON, tOFF
IC=2.0 mA, RL=100 , VCE=10 V
Phototransistor, Industry Standard
2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-55
March 27, 2000-00
MCT2/MCT2E--Characteristics TA=25C
Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector-Base Leakage Current Capacitance, Collector-Emitter Package DC Current Transfer Ratio Capacitance, Input to Output Resistance, Input to Output Switching Time CTR CIO RIO 20 -- -- -- 60 0.5 100 3.0 -- -- -- -- % pF G s Collector-Emitter Collector-Base -- BVCEO BVECO BVCBO ICBO ICBO CCE 30 7.0 70 -- -- -- -- -- -- 5.0 -- 10 -- -- -- 50 20 -- nA -- pF V Symbol VF IR CO Min. -- -- -- Typ. 1.1 -- 25 Max. 1.5 10 -- Unit V Condition
IF=20 mA
VR=3.0 V VR=0, f=1.0 MHz
A
pF
IC=1.0 mA, IF=0 mA
IE=100 A, IF=0 mA
IC=10 A, IF=0 mA VCE=10 V, IF=0 VCE=0 VCE=10 V, IF=10 mA
-- --
tON, tOFF
IC=2.0 mA, RL=100 , VCE=10 V
MCT270 through MCT277--Characteristics TA=25C
Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector-Base Leakage Current, Collector-Emitter Package DC Current Transfer Ratio MCT270 MCT271 MCT272 MCT273 MCT274 MCT275 MCT276 MCT277 Current Transfer Ratio, Collector-Emitter MCT271-276 MCT277 Collector-Emitter Saturation Voltage Capacitance, Input to Output Resistance, Input to Output Switching Time MCT270/272 MCT271 MCT273 MCT274 MCT275/277 MCT276
2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-56
Symbol VF IR CO BVCEO BVECO BVCBO ICEO CTR
Min.
Typ.
Max. 1.5 10
Unit V
Condition
-- -- --
30 7.0 70
-- --
25
IF=20 mA VR=3.0 V VR=0, f=1.0 MHz IC=10 A, IF=0 mA
IE=10 A, IF=0 mA
A
pF
-- -- -- --
50
-- -- -- --
-- -- -- -- -- -- -- -- -- -- -- 0.5 1012 -- -- -- -- -- --
V
--
nA
IC=10 A, IF=0 mA VCE=10 V, IF=0 mA VCE=10 V, IF=10 mA
--
50 45 75 125 225 70 15 100
-- 90 150 250 400 210 60 -- -- -- 0.4 -- -- 10 7.0 20 25 15 3.5
%
CTRCE VCEsat CIO RIO
12.5 40 -- -- -- -- -- -- -- -- --
% -- V pF s
VCE=0.4 V, IF=16 mA ICE=2.0 mA, IF=16 mA -- VIO=500 VDC
IC=2.0 mA, RL=100 , VCE=5.0 V
tON, tOFF
Phototransistor, Industry Standard March 27, 2000-00
Figure 1. Forward Voltage vs. Forward Current
1.4 VF - Forward Voltage - V TA = -55C TA = 25C
Figure 4. Normalized Non-saturated and Saturated CTR, TA=70C vs. LED Current
1.5 NCTR - Normalized CTR
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1
1.0
TA=70C
TA = 85C
0.5
NCTR(SAT) NCTR
0.0 1 10 IF - Forward Current - mA 100 .1 1 10 IF - LED Current - mA 100
Figure 2. Normalized Non-saturated and Saturated CTR, TA=25C vs. LED Current
1.5
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
Figure 5. Normalized Non-saturated and Saturated CTR, TA=85C vs. LED Current
1.5 NCTR - Normalized CTR
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce = 0.4 V
NCTR - Normlized CTR
1.0
TA=25C
1.0
TA=85C
0.5
NCTR(SAT) NCTR
0.5
NCTR(SAT) NCTR
0.0 0 1 10 IF - LED Current - mA 100
0.0 .1 1 10 IF - LED Current - mA 100
Figure 3. Normalized Non-saturated and Saturated CTR, TA=50C vs. LED Current
1.5 NCTR - Normalized CTR
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V
Figure 6. Collector-emitter Current vs. Temperature and LED Current
35 Ice - Collector Current - mA 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70C 25C 85C 50C
1.0
TA=50C
0.5
NCTR(SAT) NCTR
0.0 .1 1 10 IF - LED Current - mA 100
IF - LED Current - mA
2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-57
Phototransistor, Industry Standard March 27, 2000-00
Figure 7. Collector-emitter Leakage Current vs. Temp.
10 Iceo - Collector-Emitter - nA 10 10 10 10
5 4 3 2 1
Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature
1.2 70C 50C 1.0 -20C 0.8 Normalized to: Ib=20 A, Vce=10 V, TA=25C 25C
Vce = 10 V Typical
10 0 10 -1 10 -2 -20 0 20
NHFE - Normalized HFE
0.6
40
60
80
100
0.4
1
TA - Ambient Temperature - C
10 100 Ib - Base Current - A
1000
Figure 8. Normalized CTRcb vs. LED Current and Temp.
NCTRcb - Normalized CTRcb 1.5
Normalized to: Vcb=9.3 V, IF=10 mA, TA=25C
Figure 11. Normalized HFE vs. Base Current and Temp.
1.5 NHFE(sat) - Normalized Saturated HFE Normalized to: Vce=10 V, Ib=20 A TA=25C
70C 1.0 25C -20C 0.5
50C
1.0
0.5 25C 50C 70C 0.0 .1 1 10 100
Vce=0.4 V 0.0 1 10 100 1000
IF - LED Current - mA
Ib - Base Current - A
Figure 9. Normalized Photocurrent vs. IF and Temp. 10
Normalized Photocurrent
Normalized to: IF=10 mA, TA=25C
Figure 12. Propagation Delay vs. Collector Load Resistor 1000 2.5
tPLH - Propagation Delay - s tPHL - Propagation Delay - s
IF=10 mA, TA=25C VCC=5.0 V, Vth=1.5 V
1
100
tPHL
2.0
0.1
Nib, TA=-20C Nib, TA=25C Nib, TA= 50C Nib, TA=70C
10
tPLH
1.5
0.01 .1
1
10
100
1 .1
1
10
1.0 100
IF - LED Current - mA
RL - Collector Load Resistor - k
Figure 13. Switching Timing
IF
Figure 14. Switching Schematic
VCC = 5.0 V F=10 KHz, DF=50%
RL VO
tD VO tR tPLH VTH=1.5 V tPHL tS tF
IF =10 mA
2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-58
Phototransistor, Industry Standard March 27, 2000-00

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